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Electrical characterization of epitaxial layers of gallium arsenide
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Electrical characterization of epitaxial layers of gallium arsenide
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http://www.ohsu.edu/xd/education/library/services/theses-dissertations/rights-statement.cfm
Title
Electrical
characterization
of
epitaxial
layers
of
gallium
arsenide
Creator.PersonalName
Khatwani
,
Rani
Thesis.Degree
M.S.
Thesis.Major
Electrical Engineering
Thesis.DateDegreeAwarded
December
1988
Institution
Oregon Graduate Center
Department
Dept. of Electrical Engineering
Thesis.Advisor/Mentor
Kim, DaeMann
Thesis.Committee
Blakemore, John S.
Solanki, Rajendra (Raj)
Clawson, Carl
Subject.LCSH
Gallium arsenide semiconductors
Epitaxy
Call Number
Q183.5.OGC K538 1988
Description.Abstract
Epitaxial
layers
of
Gallium
Arsenide
are
grown
by
organo-metallic
chemical
vapor
phase
epitaxy
(OMVPE)
involving
a
reaction
of
arsine
and
trimethylgallium
. These
layers
are
doped
n-type
with
silane
. The
Hall
Coefficient
and
mobility
have been
measured
in
n-type
epitaxial
gallium
arsenide
from
365
K
to
15
K
, and
impurity
concentrations
were
computed
from the
results
.
Mobilities
up
to
3745
cm2
V[superscript
-1]
sec[superscript
-1]
at
300
K
and
11330
cm2
V[superscript
-1]sec[superscript
-1]
at
77
K
have been
measured
. The
techniques
for
determining
the
concentrations
of
donors
and
acceptors
in
semiconductor
samples
from
Hall
effect
and
resistivity
measurements
are
described
.
Analyses
of the
temperature
variation
of the
carrier
concentration
and
mobility
permit
the
determination
of
ND
and
NA
The
separate
contributions
to
carrier
scattering
have been
evaluated
.
Polar
scattering
is
apparently
dominant
down
to
about
100
K
.
Piezoelectric
scattering
and
deformation
potential
scattering
are
significant
at
77
K
. The
Brooks-Herring
theory
of
ionized
impurity
scattering
is
shown
to
give
good
quantitative
agreement
with
results
at
low
temperatures
.
Language
eng
Type
Text
Format.Use
Needs Adobe Acrobat Reader to view.
Format.FileType
pdf
Format.FileSize
1116.503 KB
OCLC number
19245661
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